US 12,449,732 B2
Composition for forming resist underlayer film with improved film density
Hikaru Tokunaga, Toyama (JP); Masashi Ohno, Funabashi (JP); Rikimaru Sakamoto, Toyama (JP); and Keisuke Hashimoto, Toyama (JP)
Assigned to NISSAN CHEMICAL CORPORATION, Tokyo (JP)
Appl. No. 16/097,523
Filed by NISSAN CHEMICAL CORPORATION, Tokyo (JP)
PCT Filed Apr. 25, 2017, PCT No. PCT/JP2017/016406
§ 371(c)(1), (2) Date Oct. 29, 2018,
PCT Pub. No. WO2017/188263, PCT Pub. Date Nov. 2, 2017.
Claims priority of application No. 2016-091528 (JP), filed on Apr. 28, 2016.
Prior Publication US 2019/0137878 A1, May 9, 2019
Int. Cl. G03F 7/09 (2006.01); C08G 12/08 (2006.01); C08G 12/26 (2006.01); G03F 7/26 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01)
CPC G03F 7/094 (2013.01) [C08G 12/08 (2013.01); C08G 12/26 (2013.01); G03F 7/26 (2013.01); H01L 21/0271 (2013.01); H01L 21/0332 (2013.01)] 4 Claims
 
1. A method for producing a resist underlayer film, the method comprising applying and baking a resist underlayer film-forming composition on a semiconductor substrate so as to obtain the resist underlayer film,
wherein the resist underlayer film-forming composition comprises a novolak resin having a repeating unit structure consisting of the following formula (1):

OG Complex Work Unit Chemistry
wherein a group A is an organic group that includes a ring structure comprising an aromatic ring selected from the group consisting of benzene, naphthalene and diphenylamine and a group B is each independently an organic group that includes a ring structure comprising an aromatic ring, a condensed aromatic ring, or a condensed aromatic hetero ring, wherein the repeating unit structure of formula (1) further includes two or more same or different mono- or divalent chemical groups selected from the group consisting of
chemical group (a) that is sulfide group,
chemical group (b) that is amino group, carboxyl group, a carboxylic acid alkyl ester group, nitro group, hydroxy group, ether group, or a combination thereof, with a proviso that chemical group (b) does not include a secondary amino group, and
chemical group (c) that is a fluoroalkyl group,
by way of the mono- or divalent chemical groups each being substituted for a hydrogen atom bonded to a carbon atom in the ring structure of the group A and/or of the group B;
wherein, in the two or more mono- or divalent chemical groups, at least one is selected from the chemical group (b);
wherein if the group A is diphenylamine:
the amino group of the diphenylamine is one of the two or more mono- or divalent chemical groups;
chemical group (a) is a sulfide group;
chemical group (b) is a carboxylic acid alkyl ester group, an ether group, or a combination thereof; and
chemical group (c) is a fluoroalkyl group.