US 12,449,728 B2
High quantum efficiency dry resist for low exposure dose of EUV radiation
Tse-An Yeh, Taipei (TW); Montray Leavy, Singapore (SG); and Chun Kuang Chen, Zhubei (TW)
Assigned to ENTEGRIS, INC., Billerica, MA (US)
Filed by ENTEGRIS, INC., Billerica, MA (US)
Filed on Apr. 22, 2022, as Appl. No. 17/727,133.
Claims priority of provisional application 63/178,911, filed on Apr. 23, 2021.
Prior Publication US 2022/0350242 A1, Nov. 3, 2022
Int. Cl. G03F 7/004 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01)
CPC G03F 7/0042 (2013.01) [H01L 21/0274 (2013.01); G03F 7/2004 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method, comprising
creating a metal-containing film by reacting an organo-metallic precursor with a reactive gaseous species, wherein the reactive gaseous species comprises an element having three to five valence electrons and one or more radicals selected from hydrogen, C1-C3 alkyl, and C1-C3 alkoxyl to produce a reaction product and depositing the reaction product onto a substrate using vapor deposition to form the metal-containing film.