US 12,449,680 B2
Reconfigurable photonic integrated chip based on phase change material film and processing method therefor
Zhaohui Li, Guangdong (CN); and Hongfei Chen, Guangdong (CN)
Assigned to SUN YAT-SEN UNIVERSITY, Guangdong (CN)
Appl. No. 18/270,228
Filed by SUN YAT-SEN UNIVERSITY, Guangdong (CN)
PCT Filed Apr. 21, 2023, PCT No. PCT/CN2023/089676
§ 371(c)(1), (2) Date Jun. 29, 2023,
PCT Pub. No. WO2024/001455, PCT Pub. Date Jan. 4, 2024.
Claims priority of application No. 202210744180.9 (CN), filed on Jun. 28, 2022.
Prior Publication US 2024/0168320 A1, May 23, 2024
Int. Cl. G02F 1/01 (2006.01)
CPC G02F 1/0126 (2013.01) 7 Claims
OG exemplary drawing
 
1. A processing method for a reconfigurable photonic integrated chip based on a phase change material film, comprising:
obtaining a device structure of a photonic integrated chip, the photonic integrated chip comprising:
a dielectric substrate (1);
a layer of phase change film (2) arranged on a surface of the dielectric substrate (1) and formed by depositing a phase change material, wherein under an action of external excitation, the phase change material contained in the phase change film (2) presents different states corresponding to different phase states; and
a layer of cladding film (3) arranged on a surface of the phase change film (2), wherein the cladding film (3) has low absorption of an external excitation signal, and the low absorption refers to having an extinction coefficient less than 0.001,
wherein initial state of the phase change film (2) is amorphous state;
performing irradiation on the phase change film (2) by using a continuous laser to cause the phase change material contained in the phase change film (2) in a specific area to be processed to be transformed from an amorphous state to a crystalline state, so as to obtain a photonic integrated chip device based on the phase change material film;
performing irradiation on the phase change film (2) by using a femtosecond laser to cause the phase change material contained in the phase change film (2) in the specific area undergoing the continuous laser to be transformed from the crystalline state to the amorphous state, so as to erase a surface structure of the photonic integrated chip;
during the processing method, measuring a reflection spectrum and a phase change of the specific area being processed by using a detection laser, and measuring a phase change rate of the phase change material contained in the phase change film (2) by using the detection laser and a photodetector; and
implementing real-time observation on the processing method of the phase change material by using a white light imaging system.