US 12,449,620 B2
Structure and method to remove semiconductor chip material for optical signal access to a photonic chip
George A. Kovall, Campbell, CA (US); Takashi Orimoto, Cupertino, CA (US); Gabriel Mendoza, San Francisco, CA (US); Vimal Kamineni, Mechanicville, NY (US); Himani Kamineni, Mechanicville, NY (US); and Luu Nguyen, San Jose, CA (US)
Assigned to PsiQuantum, Corp., Palo Alto, CA (US)
Appl. No. 18/252,290
Filed by PsiQuantum, Corp., Palo Alto, CA (US)
PCT Filed Nov. 9, 2021, PCT No. PCT/US2021/058670
§ 371(c)(1), (2) Date May 9, 2023,
PCT Pub. No. WO2022/099211, PCT Pub. Date May 12, 2022.
Claims priority of provisional application 63/111,542, filed on Nov. 9, 2020.
Prior Publication US 2023/0418011 A1, Dec. 28, 2023
Int. Cl. G02B 6/43 (2006.01); G02B 6/42 (2006.01)
CPC G02B 6/43 (2013.01) [G02B 6/4215 (2013.01); G02B 6/4283 (2013.01); G02B 6/4293 (2013.01)] 28 Claims
OG exemplary drawing
 
1. A device comprising:
a photonic integrated circuit (PIC) die including:
a waveguide layer including a waveguide and a grating coupler configured to couple incident light into the waveguide; and
a first set of dielectric layers on the waveguide layer; and
an electronic integrated circuit (EIC) die bonded to the PIC die, the EIC die including:
a semiconductor substrate; and
a second set of dielectric layers on the semiconductor substrate;
wherein the first set of dielectric layers faces the second set of dielectric layers; and
wherein the PIC die and the EIC die include a trench aligned with the grating coupler, the trench extending through the semiconductor substrate, the second set of dielectric layers, and the first set of dielectric layers to the waveguide layer such that the incident light passes through the trench to reach the grating coupler.