US 12,449,609 B2
Semiconductor structure
Ting-Ta Hu, Hsinchu (TW); Po-Yi Wu, Hsinchu (TW); Chieh-Yu Fang, Hsinchu (TW); and Ting-Yan Lin, Hsinchu (TW)
Assigned to FOCI FIBER OPTIC COMMUNICATIONS, INC., Hsinchu (TW)
Filed by FOCI FIBER OPTIC COMMUNICATIONS, INC., Hsinchu (TW)
Filed on May 12, 2023, as Appl. No. 18/196,597.
Claims priority of application No. 112113152 (TW), filed on Apr. 7, 2023.
Prior Publication US 2024/0337793 A1, Oct. 10, 2024
Int. Cl. G02B 6/36 (2006.01)
CPC G02B 6/3684 (2013.01) 7 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
a metal reflective layer, disposed on a surface of the substrate;
UV glue, disposed on a surface of the metal reflective layer; and
an element, adhered to the metal reflective layer through the UV glue, the element being made of light-transparent material for passing an ultraviolet ray and an area between a whole bottom surface of the element and the metal reflective layer being fully filled with the UV glue;
wherein the UV glue is cured by the ultraviolet ray in a UV-curing process and the metal reflective layer reflects the ultraviolet ray that passes through the element to accelerate curing of the UV glue.