US 12,449,593 B2
Fabricating photonics structure conductive pathways
Douglas Coolbaugh, Albany, NY (US); and Gerald Leake, Albany, NY (US)
Assigned to THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK, Albany, NY (US)
Appl. No. 17/596,775
Filed by The Research Foundation for the State University of New York, Albany, NY (US)
PCT Filed Apr. 16, 2020, PCT No. PCT/US2020/028418
§ 371(c)(1), (2) Date Dec. 17, 2021,
PCT Pub. No. WO2020/256819, PCT Pub. Date Dec. 24, 2020.
Claims priority of provisional application 62/862,825, filed on Jun. 18, 2019.
Claims priority of application No. 109112443 (TW), filed on Apr. 14, 2020.
Prior Publication US 2022/0229228 A1, Jul. 21, 2022
Int. Cl. G02B 6/12 (2006.01); G02B 6/136 (2006.01)
CPC G02B 6/12004 (2013.01) [G02B 6/136 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A photonics device, comprising:
a photonics dielectric stack on a substrate, the photonics dielectric stack including a dielectric layer and one or more photonics devices having a photosensitive material formation;
a first dielectric material layer with a first portion thereof formed over the photosensitive material formation, and a second portion thereof formed over the dielectric layer of the dielectric stack;
an etch stop layer over the first layer of dielectric material; and
a second dielectric material layer over the etch stop layer, the second dielectric material layer including an etched trench over the photosensitive material formation wherein a bottom of the trench is delimited by the photosensitive material formation.