US 12,449,577 B2
Broadband infrared absorber based on epsilon-near-zero material
Ming Fang, Hefei (CN); Chenran Liu, Hefei (CN); Meijun Kang, Hefei (CN); Ke Xu, Hefei (CN); Jian Feng, Hefei (CN); Zhicheng Xiao, Hefei (CN); Rongsheng Cheng, Hefei (CN); Xingchen Liu, Hefei (CN); and Zhixiang Huang, Hefei (CN)
Assigned to Anhui University, Anhui (CN)
Filed by Anhui University, Hefei (CN)
Filed on Nov. 28, 2022, as Appl. No. 18/059,354.
Claims priority of application No. 202111429946.6 (CN), filed on Nov. 29, 2021.
Prior Publication US 2023/0106637 A1, Apr. 6, 2023
Int. Cl. G02B 5/20 (2006.01)
CPC G02B 5/208 (2013.01) 9 Claims
OG exemplary drawing
 
1. A broadband near infrared absorber, comprising:
a top cross-shaped gold layer;
a medium layer; and
a bottom hollowed-out gold layer;
wherein a length of the top cross-shaped gold layer is the same as a length of the bottom hollowed-out gold layer; a width of the top cross-shaped gold layer is the same as a width of the bottom hollowed-out gold layer; a thickness of the top cross-shaped gold layer is different from a thickness of the bottom hollowed-out gold layer; and the medium layer is made of a material having high broadband absorption in a near infrared band; and
the bottom hollowed-out gold layer comprises a cross-shaped opening; the medium layer comprises an indium tin oxide (ITO) thin film and a silicon dioxide (SiO2) layer; the top cross-shaped gold layer, the ITO thin film, the SiO2 layer, and the bottom hollowed-out gold layer are arranged in sequence; and the top cross-shaped gold layer is directly disposed on the ITO thin film.