| CPC G02B 5/1857 (2013.01) [H01L 21/302 (2013.01); H01S 5/0225 (2021.01); H10H 20/819 (2025.01); G02B 2005/1804 (2013.01)] | 20 Claims |

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1. A grating coupler having a wafer-bonded configuration, the grating coupler comprising:
a substrate;
an oxide layer disposed on the substrate;
a silicon nitride layer disposed above the oxide layer;
a polycrystalline silicon layer disposed above the silicon nitride layer;
a monocrystalline silicon layer disposed above the polycrystalline silicon layer; and
a bi-layer grating disposed above the silicon nitride layer, the bi-layer grating comprising:
a first etched layer of the polycrystalline silicon layer; and
a second etched layer of the polycrystalline silicon layer.
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