| CPC G01R 31/2601 (2013.01) [G01R 31/52 (2020.01)] | 16 Claims |

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1. A method for monitoring a semiconductor component, comprising the following steps:
detecting, by a measuring device during operation of the semiconductor component, a leakage current which flows through a first electrode and a second electrode of the semiconductor component;
i) comparing, by a computing device, the leakage current with a first limit value for the leakage current and determining an output based on a result of the comparison and/or ii) determining, by the computing device, a time at which a maximum point of the leakage current occurs and determining the output based on the time, wherein the output includes a state of the semiconductor component; and
outputting, by an output device, the output.
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