US 12,449,448 B2
Semiconductor device having shielding structure
Suk Hwan Choi, Icheon-si (KR); Sun Beom Lee, Icheon-si (KR); and Jong Seok Jung, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Apr. 26, 2023, as Appl. No. 18/307,563.
Claims priority of application No. 10-2022-0152745 (KR), filed on Nov. 15, 2022.
Prior Publication US 2024/0159802 A1, May 16, 2024
Int. Cl. G01R 19/00 (2006.01); H03K 3/01 (2006.01)
CPC G01R 19/0084 (2013.01) [H03K 3/01 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a sensing voltage line disposed between a first circuit area and a second circuit area, and configured to transfer a sensing voltage detected in the second circuit area to the first circuit area;
a first internal voltage line disposed between the first circuit area and the second circuit area, configured to transfer an internal voltage, generated by a voltage driver of the first circuit area using the sensing voltage provided through the sensing voltage line, to the second circuit area, and configured to shield the sensing voltage line; and
a second internal voltage line disposed between the first circuit area and the second circuit area, and configured to transfer an internal voltage, generated by an additional voltage driver of the first circuit area on the basis of the sensing voltage provided through the sensing voltage line, to the second circuit area.