US 12,448,701 B2
Single crystal manufacturing method, single crystal manufacturing apparatus and crucible
Kenta Takao, Tokyo (JP); Daiki Furukawa, Tokyo (JP); Kenya Tanaka, Tokyo (JP); Mai Abe, Tokyo (JP); Takashi Hasegawa, Tokyo (JP); and Toru Umeno, Tokyo (JP)
Assigned to PROTERIAL, LTD., Tokyo (JP)
Filed by Proterial, Ltd., Tokyo (JP)
Filed on Sep. 6, 2022, as Appl. No. 17/903,196.
Claims priority of application No. 2021-147905 (JP), filed on Sep. 10, 2021; application No. 2022-028347 (JP), filed on Feb. 25, 2022; and application No. 2022-110341 (JP), filed on Jul. 8, 2022.
Prior Publication US 2023/0082972 A1, Mar. 16, 2023
Int. Cl. C30B 15/14 (2006.01); C30B 15/20 (2006.01); C30B 29/36 (2006.01)
CPC C30B 15/14 (2013.01) [C30B 15/20 (2013.01); C30B 29/36 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A single crystal manufacturing method comprising the steps of:
(a) by moving a shaft having a seed crystal attached to its tip downward, bringing a lower surface of the seed crystal into contact with a solution including carbon and silicon contained in a crucible; and
(b) growing a single crystal made of silicon carbide on the lower surface of the seed crystal, wherein the step (b) includes:
(c1) a first heating step of heating the solution so that a temperature of the solution in contact with a side surface of the crucible becomes higher than a temperature of the solution in contact with a bottom surface of the crucible; and
(c2) a second heating step of heating the solution so that a temperature of the solution in contact with the bottom surface of the crucible becomes higher than a temperature of the solution in contact with the side surface of the crucible,
wherein the first heating step and the second heating step are alternately switched, and
wherein in both the first heating step and the second heating step, the single crystal grows on the lower surface of the seed crystal.