| CPC C23C 16/45525 (2013.01) [C07C 17/00 (2013.01); C07C 27/00 (2013.01); C07C 201/00 (2013.01); C23C 16/08 (2013.01); C23C 16/18 (2013.01); C23C 16/4408 (2013.01); C23C 16/45595 (2013.01)] | 6 Claims |
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1. A method for forming a thin film comprising:
i) vaporizing a growth inhibitor for forming a thin film, injecting the growth inhibitor into an atomic layer deposition (ALD) chamber, and adsorbing the growth inhibitor on a surface of a substrate loaded in the atomic layer deposition (ALD) chamber;
ii) primary purging of an inside of the ALD chamber with a purge gas;
iii) vaporizing a thin film precursor compound and adsorbing the thin film precursor compound on the surface of the substrate loaded in the ALD chamber;
iv) secondary purging of the inside of the ALD chamber with a purge gas;
v) supplying a reaction gas into the ALD chamber; and
vi) tertiary purging of the inside of the ALD chamber with a purge gas, wherein a unit cycle comprises steps i) to vi) and is repeated to form the thin film,
wherein a ratio of the feeding amount (mg/cycle) between the growth inhibitor for forming a thin film and the precursor compound in the ALD chamber is 1:1.5 to 1:20,
wherein the growth inhibitor for forming a thin film is one or more selected from the group consisting of 1,1-dichloroethane, 1,2-dichloroethane, dichloromethane, 2-chloropropane, 1-chloropropane, 1,2-dichloropropane, 1,3-dichloropropane, 2,2-dichloropropane, 1 -chloropentane, 2-chloropentane, 3-chloropentane, chlorocyclopentane, n-butylchloride, tert-butyl chloride, sec-butyl chloride, isobutyl chloride, 1,2-dichlorobenzene, 1,4-dichlorobenzene, trimethylchlorosilane, trichloropropane, 2-chloro-2-methylbutane, and 2-methyl-1-pentane, and
wherein the feeding amount of the growth inhibitor is 0.5-50 mg/cycle.
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