US 12,448,683 B2
Method of forming a vanadium nitride-containing layer
Pia Homm Jara, Leuven (BE); Werner Knaepen, Leuven (BE); Dieter Pierreux, Dilbeek (BE); Bert Jongbloed, Oud-Heverlee (BE); Panagiota Arnou, Leuven (BE); Ren-Jie Chang, Leuven (BE); Qi Xie, Wilsele (BE); Giuseppe Alessio Verni, Vantaa (FI); and Gido van der Star, Leuven (BE)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jan. 5, 2024, as Appl. No. 18/404,983.
Application 18/404,983 is a continuation of application No. 17/113,301, filed on Dec. 7, 2020, granted, now 11,898,243.
Claims priority of provisional application 63/015,226, filed on Apr. 24, 2020.
Prior Publication US 2024/0150892 A1, May 9, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/34 (2006.01); C23C 16/04 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/285 (2006.01)
CPC C23C 16/34 (2013.01) [C23C 16/04 (2013.01); C23C 16/4408 (2013.01); C23C 16/45527 (2013.01); C23C 16/45544 (2013.01); C23C 16/56 (2013.01); H01L 21/28568 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a sequence of layers on a substrate, the method comprising
providing the substrate within a reaction chamber of a reactor;
depositing an underlayer on a surface of the substrate;
depositing, via a first cyclical deposition process, a vanadium nitride-containing layer onto the underlayer,
wherein the first cyclical deposition process comprises:
providing a vanadium precursor to the reaction chamber; and
providing a nitrogen precursor to the reaction chamber.