US 12,448,682 B2
Methods for selectively depositing an amorphous silicon film on a substrate
Timothee Blanquart, Oud-Heverlee (BE)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jan. 24, 2023, as Appl. No. 18/100,637.
Application 18/100,637 is a continuation of application No. 16/673,860, filed on Nov. 4, 2019, granted, now 11,572,620.
Claims priority of provisional application 62/756,368, filed on Nov. 6, 2018.
Prior Publication US 2023/0160060 A1, May 25, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/24 (2006.01); C23C 16/02 (2006.01); C23C 16/455 (2006.01)
CPC C23C 16/24 (2013.01) [C23C 16/0209 (2013.01); C23C 16/45536 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for selectively depositing an amorphous silicon film on a substrate comprising a metallic nitride surface and a metallic oxide surface, the method comprising;
providing a substrate within a reaction chamber;
heating the substrate to a deposition temperature;
contacting the substrate with a silicon iodide precursor utilizing a dilution gas and a carrier gas;
using a thermal chemical vapor deposition process, contacting the substrate with hydrogen gas concurrently with contacting the substrate with the silicon iodide precursor; and
selectively depositing the amorphous silicon film on the metallic nitride surface relative to the metallic oxide surface.