US 12,448,680 B2
Method of forming pattern structure including silicon nitride
Jihoon Park, Chungcheongnam-do (KR); Wan Jae Park, Chungcheongnam-do (KR); Seong Gil Lee, Chungcheongnam-do (KR); Dong Sub Oh, Chungcheongnam-do (KR); Hye Joon Kheel, Chungcheongnam-do (KR); Yun Woo Kim, Chungcheongnam-do (KR); and Da Yeong Jeong, Chungcheongnam-do (KR)
Assigned to SEMES CO., LTD., Chungcheongnam-Do (KR)
Filed by SEMES CO., LTD., Chungcheongnam-do (KR)
Filed on Nov. 28, 2023, as Appl. No. 18/520,621.
Claims priority of application No. 10-2022-0186480 (KR), filed on Dec. 27, 2022.
Prior Publication US 2024/0209497 A1, Jun. 27, 2024
Int. Cl. C23C 16/04 (2006.01); C23C 16/34 (2006.01); C23C 16/56 (2006.01)
CPC C23C 16/045 (2013.01) [C23C 16/345 (2013.01); C23C 16/56 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a pattern structure including a silicon nitride, the method comprising:
a step of providing, into a substrate processing apparatus, a substrate having one surface on which a pattern structure including a recess region in which an opening periphery portion and a bottom portion are made of a first silicon nitride is formed;
step (a1) a deposition step of depositing a second silicon nitride on the first silicon nitride so that a deposition thickness on the bottom portion has a smaller value than a deposition thickness on the opening periphery portion;
step (b1) an etching step of etching the second silicon nitride on the opening periphery portion by the thickness deposited in step (a1), etching and removing the second silicon nitride deposited in step (a1) on the bottom portion, and etching the first silicon nitride provided below the second silicon nitride; and
a step of performing steps (a1) and (b1) in one cycle n times (n is a natural number equal to or larger than 1) until the first silicon nitride constituting the bottom portion is removed.