US 12,448,545 B2
Silicon carbide (SIC) wafer polishing with slurry formulation and process
Ara Philipossian, Tucson, AZ (US); Yasa Sampurno, Tucson, AZ (US); Jason A. Keleher, Naperville, IL (US); Katherine Wortman-Otto, Minneapolis, MN (US); Abigail Linhart, Harvard, IL (US); and Kiana A. Cahue, Joliet, IL (US)
Assigned to Araca, Inc., Tucson, AZ (US)
Appl. No. 18/556,230
Filed by Araca Inc., Tucson, AZ (US)
PCT Filed May 10, 2022, PCT No. PCT/US2022/028536
§ 371(c)(1), (2) Date Oct. 19, 2023,
PCT Pub. No. WO2022/240842, PCT Pub. Date Nov. 17, 2022.
Claims priority of provisional application 63/188,305, filed on May 13, 2021.
Prior Publication US 2024/0191101 A1, Jun. 13, 2024
Int. Cl. C09G 1/02 (2006.01)
CPC C09G 1/02 (2013.01) 22 Claims
OG exemplary drawing
 
1. A method for polishing a silicon carbide surface, the method comprising:
exposing a silicon carbide surface to a composition with a pH of 2-5, the composition comprising (1) water (2) an oxidizing agent (3) a metal ion electrophile with a ligand, the metal ion electrophile present in a concentration between 0.005 wt % and 0.05 wt %, based on a total weight of the composition, and the ligand being present in a metal:ligand weight ratio between 1:8 and 1:12, and (4) a particulate abrasive;
and
polishing the silicon carbide surface while the silicon carbide surface is exposed to the composition.