US 12,448,544 B2
Chemical mechanical polishing compositions and methods of use thereof
Hooi-Sung Kim, Lake Oswego, OR (US); and Shogo Onishi, Tigard, OR (US)
Assigned to FUJIMI INCORPORATED, Aichi (JP)
Filed by FUJIMI INCORPORATED, Aichi (JP)
Filed on Feb. 17, 2023, as Appl. No. 18/111,369.
Claims priority of provisional application 63/320,382, filed on Mar. 16, 2022.
Prior Publication US 2023/0295465 A1, Sep. 21, 2023
Int. Cl. C09G 1/02 (2006.01); C09G 1/16 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/321 (2006.01)
CPC C09G 1/02 (2013.01) [C09G 1/16 (2013.01); H01L 21/304 (2013.01); H01L 21/30625 (2013.01); H01L 21/3212 (2013.01)] 20 Claims
 
1. A polishing composition comprising an abrasive, a molybdenum etching inhibitor, an oxidizer, and water, wherein
the abrasive is colloidal silica with a mean particle size ranging from about 30 to about 75 nm and a silanol density on the silica surface of from about 1.3 unit/nm2 to about 6.0 unit/nm2 the molybdenum etching inhibitor is a zwitterionic surfactant having a structure of formula (I):

OG Complex Work Unit Chemistry
wherein n is an integer selected from 8, 9, 10, 12, 13, and 14; and
the oxidizer is a peroxide;
wherein the polishing composition has a pH from about 6.5 to about 8.5.