US 12,448,543 B2
Polishing composition for semiconductor process and manufacturing method for polished article
Seung Chul Hong, Seoul (KR); Deok Su Han, Seoul (KR); Jin Hyuk Lim, Icheon-si (KR); Donghyun Kim, Icheon-si (KR); and Jieun Lee, Icheon-si (KR)
Assigned to SK enpulse Co., Ltd., Pyeongtaek-si (KR); and SK HYNIX INC., Icheon-si (KR)
Filed by SK enpulse Co., Ltd., Pyeongtaek-si (KR); and SK HYNIX INC., Icheon-si (KR)
Filed on Jul. 7, 2022, as Appl. No. 17/859,301.
Claims priority of application No. 10-2021-0089817 (KR), filed on Jul. 8, 2021.
Prior Publication US 2023/0019730 A1, Jan. 19, 2023
Int. Cl. C09G 1/02 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01)
CPC C09G 1/02 (2013.01) [H01L 21/3212 (2013.01); H01L 21/76883 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A polishing composition for a semiconductor process, comprising:
polishing particles,
wherein the polishing particles have an overall average particle size corresponding to D50, and comprises a plurality of polishing particle groups with different average particle sizes,
in which a first polishing particle group is a group with a particle diameter more than 22.5 times and 125 times or less the overall average particle size,
a second polishing particle group is a group with a particle diameter more than 0.5 times and 2.5 times or less the overall average particle size,
an absorbance is defined by Equation 1 below, and
a ratio A1/A2 of the absorbance A1 of the first polishing particle group and the absorbance A2 of the second polishing particle group is 0.38 to 1.5:
Absorbance=log(I0/I1)  [Equation 1]
In Equation 1, I0 is an amount of light when irradiating light of at least one wavelength of 385 to 425 nm in a liquid in which a grain size gradient is formed by centrifuging the polishing composition for a semiconductor process, and I1 is an amount of the irradiated light passing through the liquid, and
wherein the polishing composition has a zeta potential of 15 to 45 mV.