| CPC B81B 7/0029 (2013.01) [G01L 9/0042 (2013.01); G01L 9/0051 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0315 (2013.01)] | 8 Claims |
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1. A semiconductor pressure sensor comprising:
a first silicon substrate including a first recessed part;
a second silicon substrate including a diaphragm covering a first space in the first recessed part, the second silicon substrate being configured to hermetically seal the first space; and
a gauge resistance configured to output a deformation amount of the diaphragm by using electrical characteristics, wherein
a plurality of second spaces are hermetically sealed in a state of being separated away from the first space between the first silicon substrate and the second silicon substrate, and
the plurality of second spaces are provided in only one of a first end side or a second end side of the first space, or the plurality of second spaces includes a first plurality of second spaces provided in the first end side and a second plurality of second spaces provided in the second end side,
the plurality of second spaces being hermetically sealed such that hydrogen gas permeating toward the first space would fill the plurality of second spaces before permeating into the first space,
the first silicon substrate includes a plurality of second recessed parts surrounding the plurality of second spaces,
the semiconductor pressure sensor further comprises a silicon oxide film being not provided on a side surface and a bottom surface of the plurality of second recessed parts and being connected to the first silicon substrate and the second silicon substrate,
the second silicon substrate includes a lower surface that comprises the diaphragm, and
the lower surface of the second silicon substrate is an upper surface of the plurality of second spaces.
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