US 12,448,280 B2
Bond structures on MEMS element and ASIC element
Friedjof Heuck, Stuttgart (DE); Jochen Tomaschko, Gaeufelden (DE); Peter Schmollngruber, Aidlingen (DE); Thomas Friedrich, Moessingen-Oeschingen (DE); Volkmar Senz, Metzingen (DE); and Mike Schwarz, Viermünden (DE)
Assigned to ROBERT BOSCH GMBH, Stuttgart (DE)
Appl. No. 16/977,458
Filed by Robert Bosch GmbH, Stuttgart (DE)
PCT Filed Mar. 7, 2019, PCT No. PCT/EP2019/055641
§ 371(c)(1), (2) Date Sep. 1, 2020,
PCT Pub. No. WO2019/192797, PCT Pub. Date Oct. 10, 2019.
Claims priority of application No. 102018205156.9 (DE), filed on Apr. 5, 2018.
Prior Publication US 2020/0399116 A1, Dec. 24, 2020
Int. Cl. B81B 7/00 (2006.01); B81C 1/00 (2006.01)
CPC B81B 7/0006 (2013.01) [B81C 1/00238 (2013.01); B81B 2201/0264 (2013.01); B81B 2207/012 (2013.01); B81B 2207/07 (2013.01); B81C 2203/035 (2013.01); B81C 2203/0792 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A device comprising:
an ASIC element, the ASIC element comprising:
a first substrate;
an ASIC functional layer arranged on the first substrate;
a first metal layer arranged on the ASIC functional layer;
an oxide layer having vias;
a first bonding element; and
a first passivation layer that is arranged on the oxide layer and that includes a spacer element that forms a trough (a) in which the first bonding element is arranged, (b) into which a second bonding element is able to be plunged during a eutectic bonding process, and (c) that prevents an outflow of eutectic material of the eutectic bonding process from the trough.