US 12,120,930 B2
Display device with a driving voltage line that overlaps a transistor and a pixel electrode
Seungkyu Lee, Yongin-si (KR); Taehoon Kwon, Yongin-si (KR); and Byungsun Kim, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed on Jul. 14, 2023, as Appl. No. 18/221,944.
Application 18/221,944 is a continuation of application No. 17/157,003, filed on Jan. 25, 2021, granted, now 11,711,951.
Application 17/157,003 is a continuation of application No. 16/799,101, filed on Feb. 24, 2020, granted, now 10,903,298, issued on Jan. 26, 2021.
Application 16/799,101 is a continuation of application No. 16/107,381, filed on Aug. 21, 2018, granted, now 10,573,703, issued on Feb. 25, 2020.
Application 16/107,381 is a continuation of application No. 15/372,774, filed on Dec. 8, 2016, granted, now 10,062,743, issued on Aug. 28, 2018.
Claims priority of application No. 10-2016-0057803 (KR), filed on May 11, 2016.
Prior Publication US 2023/0363216 A1, Nov. 9, 2023
Int. Cl. H01L 29/08 (2006.01); G09G 3/3266 (2016.01); G09G 3/3291 (2016.01); H10K 59/121 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01)
CPC H10K 59/126 (2023.02) [G09G 3/3266 (2013.01); G09G 3/3291 (2013.01); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/131 (2023.02); G09G 2320/045 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A display device comprising:
a first transistor comprising a first semiconductor layer and a first gate electrode on the first semiconductor layer;
a storage capacitor overlapping the first semiconductor layer and comprising a first electrode and a second electrode on the first electrode;
a data line extending in a first direction;
a second transistor electrically coupled to the data line, the second transistor comprising a second semiconductor layer and a second gate electrode on the second semiconductor layer;
a third transistor electrically coupled to the first transistor, the third transistor comprising a third semiconductor layer and a third gate electrode on the third semiconductor layer;
a light emitting diode including a pixel electrode, an opposite electrode, and an emission layer between the pixel electrode and the opposite electrode; and
a driving voltage line extending in the first direction, wherein the driving voltage line comprises:
an extending part extending in the first direction; and
a protrusion part protruding from the extending part along a second direction crossing the first direction, and
wherein the driving voltage line overlaps the third transistor and the pixel electrode and extends continuously from the third transistor to overlap the storage capacitor and the first transistor.