US 12,120,919 B2
Display apparatus and method of manufacturing the same
Jaehwan Chu, Yongin-si (KR); Meejae Kang, Yongin-si (KR); Keunwoo Kim, Yongin-si (KR); Doona Kim, Yongin-si (KR); Sangsub Kim, Yongin-si (KR); Hanbit Kim, Yongin-si (KR); Dokyeong Lee, Yongin-si (KR); and Yongsu Lee, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Feb. 24, 2022, as Appl. No. 17/679,691.
Claims priority of application No. 10-2021-0076235 (KR), filed on Jun. 11, 2021.
Prior Publication US 2022/0399420 A1, Dec. 15, 2022
Int. Cl. H10K 59/12 (2023.01); H10K 59/121 (2023.01)
CPC H10K 59/1213 (2023.02) [H10K 59/1216 (2023.02); H10K 59/1201 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A display apparatus comprising:
a driving thin-film transistor including:
a driving channel region; and
a driving gate electrode that at least partially overlaps the driving channel region;
a compensation thin-film transistor including:
a compensation channel region; and
a compensation gate electrode that at least partially overlaps the compensation channel region, the compensation thin-film transistor being diode-connected to the driving thin-film transistor in response to a voltage applied to the compensation gate electrode;
a first insulating layer disposed between the driving channel region and the driving gate electrode of the driving thin-film transistor; and
a second insulating layer disposed between the first insulating layer and the driving gate electrode and disposed between the compensation channel region and the compensation gate electrode of the compensation thin-film transistor,
wherein a width of the compensation channel region of the compensation thin-film transistor is less than a width of the driving channel region of the driving thin-film transistor.