US 12,120,877 B2
Semiconductor device including channel structure and through electrode, electronic system, and method of forming the same
Jinyoung Park, Anyang-si (KR); Hyuk Kim, Seongnam-si (KR); and Yeongeun Yook, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 12, 2022, as Appl. No. 17/693,328.
Claims priority of application No. 10-2021-0116688 (KR), filed on Sep. 2, 2021.
Prior Publication US 2023/0066367 A1, Mar. 2, 2023
Int. Cl. H10B 43/27 (2023.01); G11C 5/06 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [G11C 5/06 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/35 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a lower structure comprising a plurality of lower wirings;
a horizontal wiring layer disposed on the lower structure, the horizontal wiring layer comprising a horizontal conductive layer, and a horizontal insulating layer extending through the horizontal conductive layer;
a stack structure on the horizontal wiring layer;
a channel structure extending into the horizontal wiring layer while extending through the stack structure; and
a through electrode connected to the plurality of lower wirings while extending through the stack structure and the horizontal insulating layer,
wherein the stack structure comprises:
a plurality of insulating layers and a plurality of electrode layers repeatedly alternately stacked, and
an interlayer insulating layer disposed at side surfaces of the plurality of insulating layers and the plurality of electrode layers, and
wherein the through electrode comprises:
a first portion extending into the interlayer insulating layer, and
a second portion disposed between the first portion and the plurality of lower wirings, the second portion having a smaller horizontal width than the first portion.