US 12,120,866 B2
Semiconductor device and method for fabricating the same
Jun Sik Kim, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Apr. 28, 2022, as Appl. No. 17/731,431.
Claims priority of application No. 10-2021-0141803 (KR), filed on Oct. 22, 2021.
Prior Publication US 2023/0125896 A1, Apr. 27, 2023
Int. Cl. H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H10B 12/00 (2023.01)
CPC H10B 12/30 (2023.02) [H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09); H10B 12/03 (2023.02); H10B 12/05 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an active layer including a channel, the active layer being spaced apart from a substrate and extending in a direction parallel to a surface of the substrate;
a gate dielectric layer formed over the active layer;
a word line laterally oriented in a direction crossing the active layer over the gate dielectric layer and including a low work function electrode and a high work function electrode, the high work function electrode having a higher work function than the low work function electrode; and
a dipole inducing layer disposed between the high work function electrode and the gate dielectric layer.