	US 12,119,618 B2
	Nitride-based semiconductor light-emitting element and manufacturing method thereof, and manufacturing method of nitride-based semiconductor crystal
Shuichi Nakazawa, Toyama (JP); Shinji Yoshida, Shiga (JP); and Isao Kidoguchi, Hyogo (JP)
Assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto (JP)
Filed by Nuvoton Technology Corporation Japan, Kyoto (JP)
Filed on May 4, 2023, as Appl. No. 18/312,370.
Application 18/312,370 is a division of application No. 17/122,856, filed on Dec. 15, 2020, abandoned.
Application 17/122,856 is a continuation of application No. PCT/JP2019/046030, filed on Nov. 25, 2019.
Claims priority of application No. 2018-231997 (JP), filed on Dec. 11, 2018.
Prior Publication US 2023/0275403 A1, Aug. 31, 2023
Int. Cl. H01S 5/22 (2006.01); H01L 21/02 (2006.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01); H01S 5/30 (2006.01); H01S 5/32 (2006.01); H01S 5/343 (2006.01)

CPC H01S 5/2202 (2013.01) [H01S 5/2214 (2013.01); H01S 5/34333 (2013.01); H01L 21/0254 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02581 (2013.01); H01S 5/04253 (2019.08); H01S 5/04257 (2019.08); H01S 5/2009 (2013.01); H01S 5/2031 (2013.01); H01S 5/305 (2013.01); H01S 5/3063 (2013.01); H01S 5/3213 (2013.01); H01S 2301/176 (2013.01); H01S 2304/00 (2013.01)]

22 Claims

1. A manufacturing method of a nitride-based semiconductor light-emitting element, the manufacturing method comprising:

forming an n-type nitride-based semiconductor layer;

forming, on the n-type nitride-based semiconductor layer, a light emission layer including a nitride-based semiconductor;

forming, on the light emission layer in an atmosphere containing a hydrogen gas, a p-type nitride-based semiconductor layer while doping the p-type nitride-based semiconductor layer with a p-type dopant at a concentration of at least 2.0×10¹⁸atom/cm³; and

annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an atmosphere not containing hydrogen,

wherein a hydrogen concentration of the p-type nitride-based semiconductor layer after the annealing is at most 5.0×10¹⁸atom/cm³and at most 5% of the concentration of the p-type dopant, and

a hydrogen concentration of the light emission layer is at most 2.0×10¹⁷atom/cm³.