US 12,119,615 B1
Semiconductor lasers with substrate mode suppression layers
Shuiqing Li, Lu'an (CN); Hongzhu Kan, Lu'an (CN); Jinjian Zheng, Lu'an (CN); Xinghe Wang, Lu'an (CN); Xin Cai, Lu'an (CN); Wanjun Chen, Lu'an (CN); Jiangyong Zhang, Lu'an (CN); Jun Huang, Lu'an (CN); and Zihan Liu, Lu'an (CN)
Assigned to ANHUI GAN SEMICONDUCTOR CO., LTD., Lu'an (CN)
Filed by ANHUI GAN SEMICONDUCTOR CO., LTD., Anhui (CN)
Filed on Apr. 17, 2024, as Appl. No. 18/638,654.
Application 18/638,654 is a continuation of application No. PCT/CN2024/081590, filed on Mar. 14, 2024.
Claims priority of application No. 202310319924.7 (CN), filed on Mar. 29, 2023.
Int. Cl. H01S 5/183 (2006.01); H01S 5/065 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/0653 (2013.01) [H01S 5/34346 (2013.01); H01S 5/183 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor laser with a substrate mode suppression layer, comprising a substrate, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, an electron blocking layer, and a second limiting layer sequentially stacked from bottom to top, wherein the first limiting layer includes a first sub-limiting layer, the substrate mode suppression layer, and a second sub-limiting layer sequentially stacked from bottom to top;
a Si/C concentration ratio of an element Si to an element C of the substrate mode suppression layer is greater than or equal to a Si/C concentration ratio of an element Si to an element C of the first sub-limiting layer, and the Si/C concentration ratio of the element Si to the element C of the first sub-limiting layer is greater than or equal to a Si/C concentration ratio of an element Si to an element C of the second sub-limiting layer; the Si/C concentration ratio of the element Si to the element C of the substrate mode suppression layer is within a range of 200-8000;
an In/Al concentration ratio of an element In to an element Al of the substrate mode suppression layer is greater than or equal to an In/Al concentration ratio of an element In to an element Al of the first sub-limiting layer, and the In/Al concentration ratio of the element In to the element Al of the first sub-limiting layer is greater than or equal to an In/Al concentration ratio of an element In to an element Al of the second sub-limiting layer; and
an H/C concentration ratio of an element H to an element C of the substrate mode suppression layer is greater than or equal to an H/C concentration ratio of an element H to an element C of the second sub-limiting layer, and the H/C concentration ratio of the element H to the element C of the second sub-limiting layer is greater than or equal to an H/C concentration ratio of an element H to an element C of the first sub-limiting layer.