US 12,119,414 B2
Semiconductor trench capacitor structure and manufacturing method thereof
Fu-Chiang Kuo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 1, 2023, as Appl. No. 18/327,869.
Application 18/327,869 is a continuation of application No. 17/461,734, filed on Aug. 30, 2021, granted, now 11,817,510.
Prior Publication US 2023/0307558 A1, Sep. 28, 2023
Int. Cl. H01L 29/94 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01)
CPC H01L 29/945 (2013.01) [H01L 21/76229 (2013.01); H01L 28/40 (2013.01); H01L 28/75 (2013.01); H01L 28/91 (2013.01); H01L 29/66181 (2013.01); H10B 12/038 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a semiconductor substrate;
a trench capacitor on the semiconductor substrate and comprising a plurality of capacitor segments extending into the semiconductor substrate and separated from each other by pillar segments, wherein each pillar segment has a T-shape shape, and has two sharp corners at a top portion, and two sidewalls beneath the two sharp corners and perpendicular to the semiconductor substrate; and
a protection dielectric layer disposed between the capacitor segments and the pillar segments and overlying top surfaces of the pillar segments.