US 12,119,413 B2
Schottky diode with tunable blocking voltage
Yu-Chun Li, New Taipei (TW); Felix Palumbo, Buenos Aires (AR); Chung C. Kuo, Manchester, NH (US); Thomas S. Chung, Merrimack, NH (US); and Maxim Klebanov, Palm Coast, FL (US)
Assigned to Allegro MicroSystems, LLC, Manchester, NH (US)
Filed by Allegro MicroSystems, LLC, Manchester, NH (US)
Filed on Aug. 16, 2022, as Appl. No. 17/819,957.
Prior Publication US 2024/0063310 A1, Feb. 22, 2024
Int. Cl. H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/872 (2013.01) [H01L 29/0623 (2013.01); H01L 29/402 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A Schottky diode comprising:
a substrate having a first type dopant;
a buried layer within the substrate and having a second type dopant;
an epitaxial layer above the buried layer and having the second type dopant;
a plurality of rings within the epitaxial layer and having the first type dopant, wherein the plurality of rings comprises an L-shaped ring;
a shallow trench isolation (STI) layer at the top region of the epitaxial layer;
an anode;
a cathode spaced from the anode by the STI layer; and
wherein the buried layer has an open region substantially vertically aligned with the anode.