US 12,119,408 B2
Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
Shunpei Yamazaki, Setagaya (JP); Masahiro Watanabe, Tochigi (JP); Mitsuo Mashiyama, Oyama (JP); Kenichi Okazaki, Tochigi (JP); Motoki Nakashima, Atsugi (JP); and Hideyuki Kishida, Ashikaga (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Sep. 8, 2023, as Appl. No. 18/243,688.
Application 15/657,273 is a division of application No. 13/473,653, filed on May 17, 2012, abandoned.
Application 18/243,688 is a continuation of application No. 17/967,001, filed on Oct. 17, 2022, granted, now 11,967,648.
Application 17/967,001 is a continuation of application No. 17/000,580, filed on Aug. 24, 2020, granted, now 11,489,077, issued on Nov. 1, 2022.
Application 17/000,580 is a continuation of application No. 15/657,273, filed on Jul. 24, 2017, abandoned.
Claims priority of application No. 2011-117354 (JP), filed on May 25, 2011; and application No. 2011-147189 (JP), filed on Jul. 1, 2011.
Prior Publication US 2023/0420568 A1, Dec. 28, 2023
Int. Cl. H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/823412 (2013.01); H01L 21/82345 (2013.01); H01L 21/823475 (2013.01); H01L 27/1225 (2013.01); H01L 27/1229 (2013.01); H01L 27/1233 (2013.01); H01L 29/66969 (2013.01); H01L 29/78603 (2013.01); H01L 29/78606 (2013.01); H01L 29/78618 (2013.01); H01L 29/78672 (2013.01)] 24 Claims
OG exemplary drawing
 
13. A semiconductor device comprising:
a first transistor, a second transistor, and a capacitor element,
wherein the first transistor is provided over the second transistor,
wherein a portion where one of a source and a drain of the first transistor is electrically connected to a gate of the second transistor is provided,
wherein data is written in the portion through the first transistor,
wherein the data is kept when the first transistor is in an off-state,
wherein a channel formation region of the first transistor includes a first oxide semiconductor layer,
wherein a channel formation region of the second transistor includes a second oxide semiconductor layer,
wherein the first oxide semiconductor layer includes a crystal whose c-axis is arranged perpendicular to a surface of the first oxide semiconductor layer,
wherein the second oxide semiconductor layer includes a crystal whose c-axis is arranged perpendicular to a surface of the second oxide semiconductor layer, and
wherein the capacitor element is electrically connected to the gate of the second transistor.