US 12,119,374 B2
Semiconductor device
Gihee Cho, Yongin-si (KR); Sangyeol Kang, Yongin-si (KR); Jungoo Kang, Seoul (KR); Taekyun Kim, Suwon-si (KR); Jiwoon Park, Seoul (KR); Sanghyuck Ahn, Daegu (KR); Jin-Su Lee, Hwaseong-si (KR); Hyun-Suk Lee, Suwon-si (KR); and Hongsik Chae, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 5, 2022, as Appl. No. 17/857,383.
Application 17/857,383 is a continuation of application No. 17/189,700, filed on Mar. 2, 2021, granted, now 11,411,075.
Claims priority of application No. 10-2020-0094799 (KR), filed on Jul. 29, 2020.
Prior Publication US 2022/0336578 A1, Oct. 20, 2022
Int. Cl. H10B 12/00 (2023.01); H01L 49/02 (2006.01)
CPC H01L 28/92 (2013.01) [H10B 12/0335 (2023.02); H10B 12/053 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a first insulating layer on the substrate;
a contact structure in the first insulating layer;
a second insulating layer on the first insulating layer;
a lower electrode on the second insulating layer, passing through the second insulating layer, and electrically connected to the contact structure, the lower electrode including a first connection portion and a second connection portion that is on the first connection portion and that is spaced apart from the first connection portion in a vertical direction that is perpendicular to a top surface of the substrate;
a first support pattern on the second insulating layer and connected to the first connection portion of the lower electrode;
a second support pattern on the first support pattern and connected to the second connection portion of the lower electrode;
a dielectric layer on the lower electrode; and
an upper electrode on the dielectric layer,
wherein:
a top surface of the first connection portion of the lower electrode and a bottom surface of the first connection portion of the lower electrode contact the dielectric layer, and
a top surface of the second connection portion of the lower electrode and a bottom surface of the second connection portion of the lower electrode contact the dielectric layer.