US 12,119,367 B2
Composite substrate for fabricating III-V photodetector arrays
Rehan Rashid Kapadia, Los Angeles, CA (US); Khaled Ahmed, San Jose, CA (US); and Frank Greer, Pasadena, CA (US)
Assigned to University of Southern California, Los Angeles, CA (US); California Institute of Technology, Pasadena, CA (US); and InPi LLC, Los Angeles, CA (US)
Filed by UNIVERSITY OF SOUTHERN CALIFORNIA, Los Angeles, CA (US)
Filed on Jul. 26, 2021, as Appl. No. 17/443,380.
Claims priority of provisional application 63/055,902, filed on Jul. 24, 2020.
Prior Publication US 2022/0028907 A1, Jan. 27, 2022
Int. Cl. H01L 27/146 (2006.01); H01L 31/0304 (2006.01); H01L 31/18 (2006.01)
CPC H01L 27/1469 (2013.01) [H01L 27/14634 (2013.01); H01L 31/03046 (2013.01); H01L 31/1852 (2013.01)] 28 Claims
OG exemplary drawing
 
1. A method for forming a composite substrate containing layers of dissimilar materials, the method comprising:
forming a release layer over a base substrate having a buffer layer, the base substrate being composed of a first material;
attaching a metal template layer to the release layer, the metal template layer being composed of a Group III metal;
depositing a capping layer over the metal template layer, the capping layer being composed of a dielectric material;
patterning the metal template layer and the capping layer to form a first composite substrate including a first plurality of separated template units separated by a first plurality of trenches;
annealing the first composite substrate in an ambient gas to form a second composite substrate wherein metal template layer is converted to a first crystalline semiconductor layer which is interposed between the buffer layer and the capping layer; and
removing the capping layer to form a third composite substrate such that the first crystalline semiconductor layer is exposed.