US 12,119,313 B2
Channelized filter using semiconductor fabrication
Dah-Weih Duan, Redondo Beach, CA (US); Elizabeth T. Kunkee, Redondo Beach, CA (US); and Stephane Larouche, Redondo Beach, CA (US)
Assigned to NORTHROP GRUMMAN SYSTEMS CORPORATION, Falls Church, VA (US)
Filed by Northrop Grumman Systems Corporation, Falls Church, VA (US)
Filed on Oct. 23, 2023, as Appl. No. 18/382,598.
Application 18/382,598 is a continuation of application No. 18/123,467, filed on Mar. 20, 2023, granted, now 11,837,561.
Application 18/123,467 is a continuation of application No. 17/745,265, filed on May 16, 2022, granted, now 11,658,136, issued on May 23, 2023.
Application 17/745,265 is a continuation of application No. 16/916,644, filed on Jul. 17, 2020, granted, now 11,373,965, issued on Jun. 28, 2022.
Prior Publication US 2024/0047388 A1, Feb. 8, 2024
Int. Cl. H01P 1/203 (2006.01); H01L 23/66 (2006.01)
CPC H01L 23/66 (2013.01) [H01P 1/20327 (2013.01); H01L 2223/6627 (2013.01); H01L 2223/6655 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor technology implemented cover suited to enhance electromagnetic field isolation for high-frequency circuits disposed on a substantially planar dielectric substrate having first metal traces that carry a high-frequency signal and second metal traces that establish a reference ground, the cover comprising;
a silicon enclosure with externally extending walls about the periphery of the silicon enclosure, ends of the external walls being dimensioned to contact the second metal traces about the periphery of the substrate when the cover is placed in engagement with the substrate;
a layer of conductive metal is disposed on the interior surface of the enclosure, the interior surface of the external walls, and the ends of the external walls;
the silicon enclosure, when the cover is placed in engagement with the substrate, providing substantially continuous areas of metal about the periphery of the silicon enclosure, the metal ends facilitating conductive engagement with respective second metal traces, when the cover is placed in engagement with the substrate, to establish a common reference ground therebetween.