US 12,119,305 B2
Semiconductor package
Kyungdon Mun, Hwaseong-si (KR); Myungsam Kang, Hwaseong-si (KR); Youngchan Ko, Seoul (KR); Yieok Kwon, Hwaseong-si (KR); Jeongseok Kim, Cheonan-si (KR); Gongje Lee, Seoul (KR); and Bongju Cho, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 29, 2023, as Appl. No. 18/161,066.
Application 18/161,066 is a continuation of application No. 17/239,141, filed on Apr. 23, 2021, granted, now 11,569,175.
Claims priority of application No. 10-2020-0107176 (KR), filed on Aug. 25, 2020.
Prior Publication US 2023/0178492 A1, Jun. 8, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/5386 (2013.01) [H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 23/5385 (2013.01); H01L 24/08 (2013.01); H01L 24/73 (2013.01); H01L 25/0657 (2013.01); H01L 2224/08235 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/0652 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
a redistribution substrate comprising a first redistribution layer;
a semiconductor chip on the redistribution substrate and electrically connected to the first redistribution layer;
at least one vertical connection structure adjacent the semiconductor chip and having a first surface roughness;
a core structure on the redistribution substrate and having a first through-hole in which the semiconductor chip is disposed, at least one second through-hole in which the at least one vertical connection structure is disposed, and a second surface roughness;
an encapsulant on the redistribution substrate, the semiconductor chip, the core structure, and the at least one vertical connection structure; and
a redistribution structure on the encapsulant and comprising a second redistribution layer,
wherein the at least one vertical connection structure is electrically connected to the first redistribution layer at a bottom surface thereof and the second redistribution layer at a top surface thereof, and
the core structure is electrically insulated to the first redistribution layer and the second redistribution layer.