US 12,119,291 B2
Hermetic sealing structures in microelectronic assemblies having direct bonding
Aleksandar Aleksov, Chandler, AZ (US); Mohammad Enamul Kabir, Portland, OR (US); Adel A. Elsherbini, Tempe, AZ (US); Shawna M. Liff, Scottsdale, AZ (US); Johanna M. Swan, Scottsdale, AZ (US); and Feras Eid, Chandler, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Dec. 14, 2020, as Appl. No. 17/121,093.
Prior Publication US 2022/0189861 A1, Jun. 16, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01)
CPC H01L 23/49822 (2013.01) [H01L 23/5383 (2013.01); H01L 24/08 (2013.01); H01L 24/32 (2013.01); H01L 23/3135 (2013.01); H01L 23/481 (2013.01); H01L 23/49816 (2013.01); H01L 23/49894 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/32225 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A microelectronic assembly, comprising:
an interposer, including a dielectric material and having a perimeter, comprising:
a first liner material at a first surface;
a second liner material at an opposing second surface; and
a hermetic seal encapsulating an inner portion of the interposer and comprising a perimeter wall through the dielectric material, wherein the perimeter wall is along the entire perimeter of the interposer and connected along the entire perimeter to both of the first and second liner materials, and wherein a material of the perimeter wall includes silicon and nitrogen, silicon and carbon and nitrogen, silicon and oxygen and carbon and nitrogen, silicon and carbon, aluminum and nitrogen, aluminum and oxygen, or aluminum and oxygen and nitrogen; and
a microelectronic component coupled to the second surface of the interposer by a direct bonding region.