US 12,119,272 B2
Semiconductor device and method for fabricating the same
Fu-Jung Chuang, Kaohsiung (TW); Po-Jen Chuang, Kaohsiung (TW); Yu-Ren Wang, Tainan (TW); Chi-Mao Hsu, Tainan (TW); Chia-Ming Kuo, Kaohsiung (TW); Guan-Wei Huang, Tainan (TW); and Chun-Hsien Lin, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Aug. 14, 2023, as Appl. No. 18/233,331.
Application 17/134,465 is a division of application No. 16/802,463, filed on Feb. 26, 2020, granted, now 10,910,277, issued on Feb. 2, 2021.
Application 16/589,032 is a division of application No. 16/030,871, filed on Jul. 10, 2018, granted, now 10,475,709, issued on Nov. 12, 2019.
Application 18/233,331 is a continuation of application No. 17/981,499, filed on Nov. 7, 2022, granted, now 11,791,219.
Application 17/981,499 is a continuation of application No. 17/134,465, filed on Dec. 27, 2020, granted, now 11,527,448, issued on Dec. 13, 2022.
Application 16/802,463 is a continuation in part of application No. 16/589,032, filed on Sep. 30, 2019, granted, now 10,607,897, issued on Mar. 31, 2020.
Claims priority of application No. 107120159 (TW), filed on Jun. 12, 2018.
Prior Publication US 2023/0386939 A1, Nov. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01)
CPC H01L 21/823878 (2013.01) [H01L 21/76224 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a fin-shaped structure on a substrate;
a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion; and
more than two gate structures on the SDB structure, wherein the more than two gate structures comprise:
a first gate structure, a second gate structure, and a third gate structure on the SDB structure.