	US 12,119,269 B2
	Array of vertical transistors having channel regions connected by an elongated conductor line
Deepak Chandra Pandey, Uttarakhand (IN); Haitao Liu, Boise, ID (US); and Kamal M. Karda, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 25, 2022, as Appl. No. 17/824,744.
Application 17/824,744 is a division of application No. 16/558,928, filed on Sep. 3, 2019, granted, now 11,373,913.
Prior Publication US 2022/0301941 A1, Sep. 22, 2022
Int. Cl. H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 23/528 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/792 (2006.01); H10B 12/00 (2023.01); H10B 51/30 (2023.01); H10B 53/30 (2023.01); H10B 63/00 (2023.01); H10B 99/00 (2023.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01)

CPC H01L 21/823487 (2013.01) [H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823885 (2013.01); H01L 23/528 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/7827 (2013.01); H01L 29/785 (2013.01); H01L 29/78642 (2013.01); H01L 29/7926 (2013.01); H10B 12/395 (2023.02); H10B 51/30 (2023.02); H10B 53/30 (2023.02); H10B 63/34 (2023.02); H10B 99/00 (2023.02); H01L 21/31111 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01)]

20 Claims

1. An array of vertical transistors, comprising:

spaced pillars individually comprising a channel region of individual vertical transistors;

a horizontally-elongated conductor line directly electrically coupling together individual of the channel regions of the pillars of a plurality of the vertical transistors; and

an upper source/drain region above the individual channel regions of the pillars, a lower source/drain region below the individual channel regions of the pillars, and a conductive gate line operatively aside the individual channel regions of the pillars and that interconnects multiple of the vertical transistors.