US 12,119,237 B2
Semiconductor device package having metal thermal interface material
Chien-Li Kuo, Hsinchu (TW); Chin-Fu Kao, Taipei (TW); and Chen-Shien Chen, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 10, 2023, as Appl. No. 18/349,292.
Application 18/349,292 is a division of application No. 17/314,522, filed on May 7, 2021, granted, now 11,742,218.
Prior Publication US 2023/0411173 A1, Dec. 21, 2023
Int. Cl. H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/538 (2006.01)
CPC H01L 21/4882 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 23/3128 (2013.01); H01L 23/3675 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 21/56 (2013.01); H01L 24/27 (2013.01); H01L 24/743 (2013.01); H01L 24/75 (2013.01); H01L 2224/214 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device package, comprising:
a package substrate having a first surface;
a semiconductor device disposed over the first surface of the package substrate;
a metal lid disposed over the semiconductor device and the package substrate; and
a metal thermal interface material (TIM) interposed between the metal lid and a top surface of the semiconductor device for bonding the metal lid and the semiconductor device, wherein a shape of a lateral sidewall of the metal TIM in a longitudinal section is concave arc, and an outermost point of the lateral sidewall is within a boundary of the semiconductor device.