US 12,119,236 B2
Method for producing a connection structure and semiconductor device
Andreas Rudolph, Regensburg (DE); Teresa Baur, Regensburg (DE); and Christoph Klemp, Regensburg (DE)
Assigned to OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg (DE)
Appl. No. 17/442,624
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Mar. 20, 2020, PCT No. PCT/EP2020/057784
§ 371(c)(1), (2) Date Sep. 24, 2021,
PCT Pub. No. WO2020/193408, PCT Pub. Date Oct. 1, 2020.
Claims priority of application No. 102019107760.5 (DE), filed on Mar. 26, 2019.
Prior Publication US 2022/0172960 A1, Jun. 2, 2022
Int. Cl. H01L 21/48 (2006.01); H01L 21/768 (2006.01); H01L 23/538 (2006.01)
CPC H01L 21/486 (2013.01) [H01L 21/76871 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method of manufacturing a connection structure, wherein the method comprises:
forming an opening in a first main surface of a first substrate;
forming a galvanic seed layer over a first main surface of a carrier substrate;
forming a first insulating connection layer over the first main surface of the first substrate and over sidewalls of the opening;
applying a second connection layer over the galvanic seed layer,
connecting the first substrate to the carrier substrate, such that the galvanic seed layer is arranged between the first main surface of the first substrate and the first main surface of the carrier substrate and the first main surface of the first substrate is arranged between a second main surface of the first substrate and the carrier substrate;
wherein the galvanic seed layer is formed over the first main surface of the carrier substrate before the first substrate is connected to the carrier substrate;
thinning the first substrate such that the opening in the first substrate is opened on the second main surface of the first substrate facing away from the carrier substrate; removing the second connection layer from the surface of the opening facing the carrier substrate after the first substrate and the carrier substrate have been joined together such that part of the galvanic seed layer is exposed,
galvanically forming a conductive material over the galvanic seed layer; and
removing the carrier substrate after the second main surface of the first substrate has been connected to the second semiconductor substrate, wherein after removing the carrier substrate portions of the second connection layer are arranged over portions of the first substrate adjacent to the conductive material.