US 12,119,235 B2
Methods of manufacture of semiconductor devices having redistribution layer using dielectric material having photoactive component
Wei-Chih Chen, Taipei (TW); Yu-Hsiang Hu, Hsinchu (TW); Hung-Jui Kuo, Hsinchu (TW); and Sih-Hao Liao, New Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 30, 2021, as Appl. No. 17/245,856.
Claims priority of provisional application 63/109,474, filed on Nov. 4, 2020.
Prior Publication US 2022/0139725 A1, May 5, 2022
Int. Cl. H01L 21/48 (2006.01); G03F 7/00 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 27/146 (2006.01)
CPC H01L 21/4857 (2013.01) [G03F 7/70 (2013.01); H01L 21/481 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 23/49894 (2013.01); H01L 24/24 (2013.01); H01L 24/25 (2013.01); H01L 27/14634 (2013.01); H01L 2224/24147 (2013.01); H01L 2224/24227 (2013.01); H01L 2224/25171 (2013.01); H01L 2224/2518 (2013.01); H01L 2924/14335 (2013.01); H01L 2924/1461 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming a redistribution layer over a substrate;
applying a first dielectric material to the redistribution layer and the substrate, wherein the first dielectric material has a transmittance to a first energy of greater than 0.5%, the first dielectric material comprising:
a first photoactive compound (PAC) with the following structure:

OG Complex Work Unit Chemistry
a second PAC with at least two rings, the second PAC having the following structure:

OG Complex Work Unit Chemistry
imaging the first dielectric material with the first energy.