US 12,119,229 B2
Method of manufacturing semiconductor structure
Yu-Hsiang Hu, Hsinchu (TW); Wei-Yu Chen, Taipei (TW); Hung-Jui Kuo, Hsinchu (TW); Wei-Hung Lin, Hsinchu County (TW); Ming-Da Cheng, Hsinchu County (TW); and Chung-Shi Liu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Apr. 22, 2022, as Appl. No. 17/727,606.
Application 15/830,621 is a division of application No. 14/192,374, filed on Feb. 27, 2014, granted, now 9,837,278, issued on Dec. 5, 2017.
Application 17/727,606 is a continuation of application No. 16/897,249, filed on Jun. 9, 2020, granted, now 11,322,360.
Application 16/897,249 is a continuation of application No. 15/830,621, filed on Dec. 4, 2017, granted, now 10,707,084, issued on Jul. 7, 2020.
Prior Publication US 2022/0246435 A1, Aug. 4, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/304 (2006.01); H01L 23/00 (2006.01); H01L 23/14 (2006.01); H01L 23/15 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2023.01); H01L 25/07 (2006.01); H01L 21/56 (2006.01)
CPC H01L 21/304 (2013.01) [H01L 23/147 (2013.01); H01L 23/15 (2013.01); H01L 23/3121 (2013.01); H01L 23/3157 (2013.01); H01L 23/3185 (2013.01); H01L 23/3192 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/0655 (2013.01); H01L 25/072 (2013.01); H01L 21/561 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/11 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/92244 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor structure, comprising:
receiving a die comprising a top surface and a sacrificial layer covering the top surface;
disposing the die on a substrate;
disposing a molding surrounding the die;
removing a portion of the molding to expose a sidewall of the sacrificial laver;
removing the sacrificial layer from the die; and
disposing a polymer over the die and the molding, wherein the polymer has a first bottom surface contacting the die and a second bottom surface contacting the molding, and the first bottom surface is at a level substantially same as the second bottom surface.