	US 12,119,227 B2
	Semiconductor apparatus and manufacturing method of semiconductor apparatus
Kosuke Yoshida, Matsumoto (JP); Takashi Yoshimura, Matsumoto (JP); Hiroshi Takishita, Matsumoto (JP); Misaki Uchida, Matsumoto (JP); Michio Nemoto, Matsumoto (JP); Nao Suganuma, Matsumoto (JP); and Motoyoshi Kubouchi, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kawasaki (JP)
Filed on Nov. 24, 2021, as Appl. No. 17/456,382.
Application 17/456,382 is a continuation of application No. PCT/JP2020/046167, filed on Dec. 10, 2020.
Claims priority of application No. 2019-228409 (JP), filed on Dec. 18, 2019; application No. 2020-087349 (JP), filed on May 19, 2020; and application No. 2020-189026 (JP), filed on Nov. 12, 2020.
Prior Publication US 2022/0084828 A1, Mar. 17, 2022
Int. Cl. H01L 29/36 (2006.01); H01L 21/265 (2006.01); H01L 21/66 (2006.01); H01L 29/739 (2006.01)

CPC H01L 21/26513 (2013.01) [H01L 22/10 (2013.01); H01L 29/36 (2013.01); H01L 29/7397 (2013.01)]

13 Claims

1. A semiconductor apparatus comprising:

a semiconductor substrate having an upper surface and a lower surface and containing oxygen;

a first peak of a hydrogen chemical concentration disposed on the lower surface side of the semiconductor substrate; and

a flat portion disposed on the upper surface side of the semiconductor substrate with respect to the first peak, containing a hydrogen donor, and having a substantially flat donor concentration distribution in a depth direction of the semiconductor substrate,

wherein

an oxygen contribution ratio indicating a ratio of an oxygen chemical concentration contributing to generation of the hydrogen donor in the oxygen chemical concentration of the oxygen ranges from 1×10⁻⁵to 7×10⁻⁴,

a concentration of the oxygen contributing to generation of the hydrogen donor in the flat portion is lower than the hydrogen chemical concentration, and

a hydrogen donor concentration in the flat portion ranges from 2×10¹²/cm³to 5×10¹⁴/cm³.