US 12,119,225 B2
Oxide semiconductor sputtering target and method of fabricating thin-film transistor using same
Shinhyuk Kang, Seoul (KR); Jeonghyun Moon, Daegu (KR); and Kangmin Ok, Gyeongsangbuk-do (KR)
Assigned to KV Materials Co., Ltd., (KR)
Filed by KV Materials Co., Ltd., Gyeongbuk (KR)
Filed on Jun. 15, 2022, as Appl. No. 17/841,270.
Claims priority of application No. 10-2021-0081335 (KR), filed on Jun. 23, 2021.
Prior Publication US 2022/0415654 A1, Dec. 29, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 14/34 (2006.01); H01J 37/34 (2006.01); H01L 29/786 (2006.01)
CPC H01L 21/02631 (2013.01) [C23C 14/3414 (2013.01); H01J 37/3426 (2013.01); H01L 21/02565 (2013.01); H01L 29/7869 (2013.01); C23C 14/3407 (2013.01)] 12 Claims
OG exemplary drawing
 
1. An oxide semiconductor sputtering target used in a sputtering process to deposit an active layer of a thin-film transistor, comprising:
a material based on a composition of In, Sn, Ga, Zn, and O,
wherein the material comprises gallium oxide, tin oxide, zinc oxide, and indium oxide, wherein In, Sn, Ga, and Zn contents are in ranges of 60% to 80%, 0.5% to 8%, 5% to 15%, and 10% to 30% by weight with respect to the weight of In+Sn+Ga+Zn, respectively.