US 12,119,209 B2
Dynamic processing chamber baffle
Udit S. Kotagi, Dharwad (IN); and Mayur Govind Kulkarni, Bangalore (IN)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Oct. 11, 2021, as Appl. No. 17/498,189.
Prior Publication US 2023/0114104 A1, Apr. 13, 2023
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/3244 (2013.01) [H01J 37/32697 (2013.01); H01J 37/32715 (2013.01); H01J 37/32733 (2013.01); H01J 2237/3323 (2013.01); H01J 2237/334 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of semiconductor processing comprising:
delivering a deposition precursor into a processing region of a semiconductor processing chamber;
depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber, wherein the processing region is maintained at a first pressure during the depositing;
extending a baffle within the processing region, wherein the baffle modifies a flow path within the processing region;
forming a plasma of a treatment precursor within the processing region of the semiconductor processing chamber, wherein the processing region is maintained at a second pressure during the forming; and
treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor.