CPC G11C 29/52 (2013.01) [G11C 29/022 (2013.01); G11C 29/024 (2013.01)] | 20 Claims |
1. A computer-implemented method of soft correction in a memory device, the computer-implemented method comprising:
selecting a plurality of memory locations at a memory device, the memory locations corresponding to a first page including a first plurality of bits and a second page including a second plurality of bits;
modifying, based on the first plurality of bits and the second plurality of bits, a first voltage threshold corresponding to an estimated read voltage for the first plurality of bits;
allocating, to a voltage range bounded by the first voltage threshold, a log-likelihood ratio (LLR); and
decoding, based on the LLR corresponding to the voltage range, the first plurality of bits.
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