US 12,119,062 B2
Managing compensation for cell-to-cell coupling and lateral migration in memory devices based on a sensitivity metric
Mustafa N. Kaynak, San Diego, CA (US); Patrick R. Khayat, San Diego, CA (US); and Sivagnanam Parthasarathy, Carlsbad, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 9, 2022, as Appl. No. 17/884,113.
Prior Publication US 2024/0055050 A1, Feb. 15, 2024
Int. Cl. G11C 16/08 (2006.01); G06F 3/06 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01)
CPC G11C 16/08 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0655 (2013.01); G06F 3/0679 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01); G11C 16/0483 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory device comprising a plurality of memory cells each associated with a corresponding wordline of a plurality of wordlines located on a die of the memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
determining, for a wordline of the plurality of wordlines, a respective value of a sensitivity metric that reflects a sensitivity of a threshold voltage of a memory cell associated with the wordline to a change in a threshold voltage of an adjacent memory cell;
determining, for the wordline, that the respective value of the sensitivity metric satisfies a threshold criterion;
responsive to determining that the respective value of the sensitivity metric satisfies the threshold criterion, associating the wordline with a first wordline group, wherein the first wordline group comprises one or more wordlines, and wherein each wordline of the one or more wordlines is associated with a respective value of the sensitivity metric that satisfies the threshold criterion; and
performing, on a specified memory cell connected to the wordline associated with the first wordline group, a compensatory operation to adjust one or more voltages applied to the specified memory cell.