CPC G11C 16/08 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0655 (2013.01); G06F 3/0679 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01); G11C 16/0483 (2013.01)] | 20 Claims |
1. A system comprising:
a memory device comprising a plurality of memory cells each associated with a corresponding wordline of a plurality of wordlines located on a die of the memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
determining, for a wordline of the plurality of wordlines, a respective value of a sensitivity metric that reflects a sensitivity of a threshold voltage of a memory cell associated with the wordline to a change in a threshold voltage of an adjacent memory cell;
determining, for the wordline, that the respective value of the sensitivity metric satisfies a threshold criterion;
responsive to determining that the respective value of the sensitivity metric satisfies the threshold criterion, associating the wordline with a first wordline group, wherein the first wordline group comprises one or more wordlines, and wherein each wordline of the one or more wordlines is associated with a respective value of the sensitivity metric that satisfies the threshold criterion; and
performing, on a specified memory cell connected to the wordline associated with the first wordline group, a compensatory operation to adjust one or more voltages applied to the specified memory cell.
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