US 12,118,210 B2
Using bad blocks for system data in memory
Kok Hua Tan, Singapore (SG); Yong Kiang Chua, Singapore (SG); and Chee Hock Ngo, Singapore (SG)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 25, 2020, as Appl. No. 17/104,291.
Prior Publication US 2022/0164107 A1, May 26, 2022
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0604 (2013.01) [G06F 3/0619 (2013.01); G06F 3/064 (2013.01); G06F 3/0679 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A system, comprising:
a memory component having a plurality of dies, including a first die having a first block of memory cells designated as a first bad block; and
a processing device, included in the memory component, to:
identify, responsive to an error detection operation performed on placeholder data programmed to a number of pages of memory cells in the first bad block of the first die determining there are no errors in the placeholder data programmed to the number of pages of memory cells, the number of pages of memory cells as functional pages of memory cells in the first bad block of the first die;
program system data to the identified functional pages of memory cells in the first bad block of the first die;
if the number of pages of memory cells identified as functional pages of memory cells in the first bad block of the first die does not meet or exceed a particular number of pages:
identify, responsive to an error detection operation performed on placeholder data programmed to a number of pages of memory cells in a second block of memory cells of the first die designated as a second bad block determining there are no errors in the placeholder data programmed to the number of pages of memory cells in the second bad block of the first die, the number of pages of memory cells in the second bad block of the first die as functional pages of memory cells in the second bad block of the first die; and
program system data to the identified functional pages of memory cells in the second bad block of the first die; and
if the number of pages of memory cells identified as functional pages of memory cells in the first bad block of the first die meets or exceeds the particular number of pages:
identify, responsive to an error detection operation performed on placeholder data programmed to a number of pages of memory cells in a third block of memory cells of a second die of the memory component designated as a third bad block determining there are no errors in the placeholder data programmed to the number of pages of memory cells in the third bad block of the second die, the number of pages of memory cells in the third bad block of the second die as functional pages of memory cells in the third bad block of the second die; and
program system data to the identified functional pages of memory cells in the third bad block of the second die.