CPC G03F 7/70125 (2013.01) [G03F 7/70116 (2013.01); G03F 7/70516 (2013.01)] | 20 Claims |
1. A method comprising:
identifying points within an illumination plane of a photolithography system that are associated with pattern shifts resulting from diffraction of radiation off a patterning device due to asymmetric phase effects among diffraction orders;
determining shifts, associated with the identified points, of a pattern for imaging a feature onto a substrate using the photolithography system; and
modifying the illumination to reduce the determined pattern shifts.
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