US 12,117,704 B2
Display device
Masatoshi Yokoyama, Tochigi (JP); Shigeki Komori, Tochigi (JP); Manabu Sato, Tochigi (JP); Kenichi Okazaki, Tochigi (JP); and Shunpei Yamazaki, Setagaya (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Dec. 4, 2023, as Appl. No. 18/527,464.
Application 18/527,464 is a continuation of application No. 18/085,689, filed on Dec. 21, 2022, granted, now 11,841,595.
Application 18/085,689 is a continuation of application No. 17/580,742, filed on Jan. 21, 2022, granted, now 11,543,718, issued on Jan. 3, 2023.
Application 17/580,742 is a continuation of application No. 17/366,474, filed on Jul. 2, 2021, granted, now 11,327,376, issued on May 10, 2022.
Application 17/366,474 is a continuation of application No. 17/082,094, filed on Oct. 28, 2020, granted, now 11,137,651, issued on Oct. 5, 2021.
Application 17/082,094 is a continuation of application No. 16/865,672, filed on May 4, 2020, granted, now 10,877,338, issued on Dec. 29, 2020.
Application 16/865,672 is a continuation of application No. 16/583,817, filed on Sep. 26, 2019, granted, now 10,852,576, issued on Dec. 1, 2020.
Application 16/583,817 is a continuation of application No. 16/026,227, filed on Jul. 3, 2018, granted, now 10,437,091, issued on Oct. 8, 2019.
Application 16/026,227 is a continuation of application No. 15/144,916, filed on May 3, 2016, granted, now 10,018,887, issued on Jul. 10, 2018.
Application 15/144,916 is a continuation of application No. 14/746,885, filed on Jun. 23, 2015, granted, now 9,366,894, issued on Jun. 14, 2016.
Application 14/746,885 is a continuation of application No. 13/942,468, filed on Jul. 15, 2013, granted, now 9,097,925, issued on Aug. 4, 2015.
Claims priority of application No. 2012-161726 (JP), filed on Jul. 20, 2012.
Prior Publication US 2024/0192558 A1, Jun. 13, 2024
Int. Cl. G02F 1/1362 (2006.01); G02F 1/1333 (2006.01); G02F 1/1343 (2006.01)
CPC G02F 1/136227 (2013.01) [G02F 1/133345 (2013.01); G02F 1/134309 (2013.01); G02F 1/13439 (2013.01); G02F 1/136277 (2013.01); G02F 1/134372 (2021.01); G02F 2202/02 (2013.01); G02F 2202/10 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A liquid crystal display device comprising:
a first conductive layer configured to function as a gate electrode layer of a transistor;
an oxide semiconductor film over and overlapping with the first conductive layer, the oxide semiconductor film comprising a channel formation region of the transistor;
a second conductive layer over and electrically connected to the oxide semiconductor film, the second conductive layer configured to function as one of a source electrode layer and a drain electrode layer of the transistor;
a first inorganic insulating film over the second conductive layer;
a first organic insulating film over the first inorganic insulating film;
a first transparent conductive layer over the first organic insulating film;
a second inorganic insulating film over the first transparent conductive layer;
a second transparent conductive layer over the second inorganic insulating film; and
a liquid crystal layer over the second transparent conductive layer,
wherein the second transparent conductive layer is electrically connected to the second conductive layer via a first opening provided in the first inorganic insulating film, a second opening provided in the first organic insulating film, and a third opening provided in the second inorganic insulating film,
wherein, in the second opening, the first inorganic insulating film is in contact with the second inorganic insulating film,
wherein the first inorganic insulating film and the second inorganic insulating film comprise silicon nitride,
wherein, in the third opening, the second transparent conductive layer is in contact with the second conductive layer,
wherein, in a cross-sectional view, the first organic insulating film comprises a first region overlapping with the second conductive layer, and
wherein the first region is not covered with the second inorganic insulating film.