CPC G01J 5/03 (2022.01) [G01J 5/24 (2013.01); H01L 27/14649 (2013.01); H01L 31/02966 (2013.01); H04N 5/33 (2013.01)] | 20 Claims |
1. A thermal radiation detection system, comprising:
a plurality of infrared sensor elements arranged as an array, wherein each of the plurality of infrared sensor elements comprises a semiconductor selected from a mercury-cadmium-telluride (HgCdTe)-based photodiode infrared detector, or an Indium Arsenide (InAs)-based photodiode infrared detector, configured to generate an output responsive to detected infrared wavelengths;
a temperature sensing circuit, the temperature sensing circuit configured to generate signals correlated to temperatures of one or more of the plurality of infrared sensor elements;
an amplifier circuit, the amplifier circuit configured to convert the outputs from the plurality of infrared sensor elements to output voltages, wherein the amplifier circuit comprises a transimpedance amplifier; and
a signal processing circuit, the signal processing circuit configured to generate a signal usable by an imaging system based on the signals generated by the temperature sensing circuit and output based on the infrared sensor elements.
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