US 12,116,670 B2
Substrate processing method and substrate processing apparatus
Koichi Matsunaga, Kumamoto (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Appl. No. 17/272,884
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
PCT Filed Aug. 9, 2019, PCT No. PCT/JP2019/031676
§ 371(c)(1), (2) Date Mar. 2, 2021,
PCT Pub. No. WO2020/049959, PCT Pub. Date Mar. 12, 2020.
Claims priority of application No. 2018-166108 (JP), filed on Sep. 5, 2018.
Prior Publication US 2021/0317579 A1, Oct. 14, 2021
Int. Cl. C23C 16/52 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/52 (2013.01) [H01L 21/02118 (2013.01); H01L 21/0228 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A substrate processing method of processing a substrate with gas inside a processing container, the substrate having a front surface on which a semiconductor device is formed, the substrate processing method comprising:
supporting a rear surface of the substrate with the front surface oriented upward by a support part, so as to form a gap between an entire rear surface of the substrate and a guide surface facing the entire rear surface;
exhausting an interior of the processing container from an exhaust port formed beyond the substrate supported by the support part along a circumferential direction of the processing container to exhaust the gas; and
forming a thin film on the entire rear surface of the substrate through a vapor deposition by supplying a raw material gas from a side of the guide surface into the gap via a gas ejection port facing the rear surface and heating the raw material gas,
wherein the substrate processing method includes at least one of following conditions:
(condition a) the forming the thin film includes;
setting a height of the gap to a first value and supplying the raw material gas into the gap; and
setting the height of the gap to a second value smaller than the first value and supplying the raw material gas into the gap, and
(condition b) the forming the thin film includes changing, during the film formation, a ratio of flow rates of the raw material gas ejected from a first gas ejection port and a second gas ejection port formed at different positions on the substrate in a radial direction.